碳化硅(SiC)

碳化硅(SiC)
產品詳情



Grade
Zero MPD
ProductionResearch GradeDummy Grade
Diameter

50.8 ±0.38 mm, 76.2 ±0.38 mm, 100±0.5 mm, 150±0.25mm

Thickness
4H-N

350 μm±25μm

4H-SI

500 μm±25μm

Wafer Orientation

Off axis : 4.0° toward 1120 ±0.5° for 4H-N On axis : <0001>±0.5° for 4H-SI

Micropipe Density

≤1 cm-2

≤5 cm-2

≤15 cm-2

≤50 cm-2

Resistivity4H-N

0.015~0.028 Ω·cm

6H-N

0.02~0.1 Ω·cm

4/6H-SI

>1E5 Ω·cm

(90%) >1E5 Ω·cm

Primary Flat

{10-10}±5.0°

Primary Flat Length

15.9 mm±1.7 mm,   22.2 mm±3.2 mm, 32.5 mm±2.0 mm,   47.5 mm±2.5 mm

Secondary Flat Length

8.0 mm±1.7 mm, 11.2 mm±1.5 mm, 18.0mm±2.0 mm

Secondary Flat Orientation

Silicon face up: 90° CW. from Prime flat ±5.0°

Edge exclusion

3 mm

TTV/Bow /Warp

≤15μm /≤25μm /≤40μm

Roughness

Polish Ra≤1 nm

CMP Ra≤0.5 nm

Cracks by high intensity light

None

None

1 allowed, ≤1 mm

Hex Plates by high intensity light

Cumulative area≤1 %

Cumulative area≤1 %

Cumulative area≤3 %

Polytype Areas by high intensity light

None

Cumulative area≤2 %

Cumulative area≤5%

Scratches by high intensity light

3 scratches to 1×wafer diameter cumulative length

5 scratches to 1×wafer diameter cumulative length

8 scratches to 1×wafer diameter cumulative length

Edge chip

None

3 allowed, ≤0.5 mm each

5 allowed, ≤1 mm each

Contamination by

None

high intensity light


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