砷化鎵(GaAs)

砷化鎵(GaAs)
產品詳情


Type/Dopant
Semi-Insulated
P-Type/ZnN-Type/SiN-Type/Si
ApplicationMicro EletronicLEDLaser Diode
Growth MethodVGF
Diameter2", 3", 4", 6"
Orientation(100)±0.5°(100)±0.5°
Thickness350-625um±25um
OF/IFUS EJ or Notch
Carrier Concentration-(0.5-5)*1019(0.4-4)*1018(0.4-0.25)*1018
Resistivity (ohm-cm)>107(1.2-9.9)*10-3(1.2-9.9)*10-3(1.2-9.9)*10-3
Mobility (cm2/V.S.)>400050-120>1000>1500
Etch Pitch Density (/cm2)<5000<5000<5000<500
TTV   [P/P] (μm)<5
TTV   [P/E] (μm)<10
Warp (μm)<10
Surface FinishedP/P, P/E, E/E
Note:Other Specifications maybe available upon request


供應產品
區熔硅片
化合物半導體
外延片
氧化片
單晶硅棒
直拉硅片
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